The device is resistant to radiation and high temperatures
Scientists from the Russian Technological University MIREA have created a new type of field-effect transistor based on diamond. According to the Ministry of Education and Science, this device can be used in conditions where conventional electronics lose their functionality, such as in spacecraft and nuclear power.
/imgs/2025/05/08/08/6808494/93344c71b8165284a4802f269a512761cf7f64b6.jpg "Russia Develops Diamond Transistor for Space")
The transistor’s special feature is the use of a thin diamond layer less than one micron thick. This layer is obtained using a special thermochemical treatment that allows you to get rid of surface defects. This technology improves the electrical characteristics of the device and makes it more reliable when used in difficult conditions.
